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翻訳と辞書　辞書検索 [ 開発暫定版 ] スポンサード リンク Hydride vapour phase epitaxy ： ウィキペディア英語版 Hydride vapour phase epitaxy Hydride vapour phase epitaxy (HVPE) is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their related compounds, in which hydrogen chloride is reacted at elevated temperature with the group-III metals to produce gaseous metal chlorides, which then react with ammonia to produce the group-III nitrides. Carrier gasses commonly used include ammonia, hydrogen and various chlorides. HVPE technology can significantly reduce the cost of production compared to the most common method of vapor deposition of organometallic compounds (MOCVD).〔(Hydride Vapour Phase Epitaxy technology )〕 Cost reduction is achieved by significantly reducing the consumption of NH3, reducing the capital equipment costs, due to the high growth rate. See (Diagram ) Developed in the 1960s, it was the first epitaxial method used for the fabrication of single GaN crystals. ==References== 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Hydride vapour phase epitaxy」の詳細全文を読む スポンサード リンク 翻訳と辞書 : 翻訳のためのインターネットリソース Copyright(C) kotoba.ne.jp 1997-2016. All Rights Reserved.